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 31.05.2007   Карта сайта     Language По-русски По-английски
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31.05.2007

Nature 447, 573-576 (31 May 2007) | doi:10.1038/nature05833; Received 17 July 2006; Accepted 10 April 2007



Spin-based logic in semiconductors for reconfigurable large-scale circuits


H. Dery1, P. Dalal1, L stroke. Cywin acuteski1 & L. J. Sham1



  1. Department of Physics, University of California San Diego, La Jolla, California 92093-0319, USA


Correspondence to: H. Dery1 Correspondence and requests for materials should be addressed to H.D. (Email: hdery@ucsd.edu).





Research in semiconductor spintronics aims to extend the scope of conventional electronics by using the spin degree of freedom of an electron in addition to its charge1. Significant scientific advances in this area have been reported, such as the development of diluted ferromagnetic semiconductors2, 3, spin injection into semiconductors from ferromagnetic metals4, 5, 6, 7, 8 and discoveries of new physical phenomena involving electron spin9, 10. Yet no viable means of developing spintronics in semiconductors has been presented. Here we report a theoretical design that is a conceptual step forward—spin accumulation is used as the basis of a semiconductor computer circuit. Although the giant magnetoresistance effect in metals11, 12 has already been commercially exploited, it does not extend to semiconductor/ferromagnet systems, because the effect is too weak for logic operations. We overcome this obstacle by using spin accumulation rather than spin flow13, 14, 15. The basic element in our design is a logic gate that consists of a semiconductor structure with multiple magnetic contacts; this serves to perform fast and reprogrammable logic operations in a noisy, room-temperature environment. We then introduce a method to interconnect a large number of these gates to form a 'spin computer'. As the shrinking of conventional complementary metal-oxide–semiconductor (CMOS) transistors reaches its intrinsic limit, greater computational capability will mean an increase in both circuit area and power dissipation. Our spin-based approach may provide wide margins for further scaling and also greater computational capability per gate.



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  • Harton Vladislav Vadim  honorary member of ISSC science council

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  • Yakushev Mikhail Vasilii  honorary member of ISSC science council

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