В 2011 г. расходы федерального бюджета на фундаментальные исследования увеличатся на 9% по сравнению с 2010 г., расходы на прикладные научные исследования — на 50%
Two-dimensional electron gas with universal subbands at the surface of SrTiO3
A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhès,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fèvre,G. Herranz,M. Bibes,N. Reyren,Y. Apertet,P. Lecoeur,A. Barthélémy& M. J. Rozenberg
AffiliationsContributionsCorresponding author Journal name:
Nature Volume:469,Pages:189–193 Date published:(13 January 2011) DOI: doi:10.1038/nature09720
As silicon is the basis of conventional electronics, so strontium titanate (SrTiO3) is the foundation of the emerging field of oxide electronics1, 2. SrTiO3 is the preferred template for the creation of exotic, two-dimensional (2D) phases of electron matter at oxide interfaces3, 4, 5 that have metal–insulator transitions6, 7, superconductivity8, 9 or large negative magnetoresistance10. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs), which is crucial to understanding their remarkable properties11, 12, remains elusive. Here we show, using angle-resolved photoemission spectroscopy, that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3 (including the non-doped insulating material) independently of bulk carrier densities over more than seven decades. This 2DEG is confined within a region of about five unit cells and has a sheet carrier density of ~0.33 electrons per square lattice parameter. The electronic structure consists of multiple subbands of heavy and light electrons. The similarity of this 2DEG to those reported in SrTiO3-based heterostructures6, 8, 13 and field-effect transistors9, 14 suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices and a novel means of generating 2DEGs at the surfaces of transition-metal oxides.
Condensed-matter physics: The conducting face of an insulator
Elbio Dagotto Journal name: Nature Volume:469,Pages:167–168
Date published:(13 January 2011)
DOI:doi:10.1038/469167a
Published online12 January 2011Stacking two oxide insulators together is known to yield a conducting system at the interface between the oxides. But the discovery that simply cleaving such an insulator yields the same outcome is unexpected.
13.01.2011
Технические специалисты институтов УрО РАН приглашаются к участию в совместной практической конференции представителей учреждений Уральского отделения РАН и специалистов фирмы Microsoft, которая состоится 24 января 2011 года в Институте математики и механики УрО РАН (Екатеринбург, ул. С. Ковалевской, 16).
Конференция посвящена технологиям построения единого коммуникационного пространства и совместной с фирмой Microsoft работе в научных организациях.
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