Electron spectroscopy study in the NbN growth for NbN/AlN interfaces
M. Luccia, e, S. Sannaa, G. Continib, N. Zemab, V. Merloa, e, M. Salvatoa, d, e, H.N. Thanha, c and I. Davolia, e, ,
aUniversità di Roma “Tor Vergata” Via della Ricerca Scientifica 1, Roma 00133, Italy bISM-CNR, Via del Fosso del Cavaliere 100, Roma 00133, Italy cCryogenics Laboratory, Hanoi National University, 334 Nguyen Trai, Thanh Xuan, Hanoi, Viet Nam dCNR/INFM Laboratorio Regionale SuperMat, I-84081 Baronissi (Sa), Italy eMicro and Nano-structured Systems Laboratory (MINAS) Università di Roma, “Tor Vergata”, Italy
Available online 4 January 2007.
NbN superconductor and wide band gap AlN thin films were deposited using sputtering at room temperature. Study of the nitride interfaces are forerunner to the growth Josephson junctions that are considered able to work in the terahertz frequency. We find that to be compatible with lithography technology and to have a high critical transition temperature, the substrate should not be overheated, and this means working in low power regime to limit the induced heating of the plasma. X-ray photoelectron spectroscopy and X-ray diffraction analysis were performed on samples deposited on crystalline, amorphous, flexible, and nanostructured substrates. The experimental results suggest us how to improve the deposition process in order to obtain the best nitride films as well as NbN/AlN/NbN trilayers for Josephson junction applications.
Keywords: NbN; AlN; Superconducting; Electron spectroscopy; Josephson junctions
Corresponding author. Present address: Micro and Nano-structured Systems Laboratory (MINAS), Università di Roma “Tor Vergata” Via della Ricerca Scientifica 1, Roma 00133, Italy.
Surface Science Volume 601, Issue 13, 1 July 2007, Pages 2647-2650 International Conference on NANO-Structures Self-Assembling, International Conference on NANO-Structures Self-Assembling