aInstitute of Microelectronics, Tsinghua University, Beijing 100084, People’s Republic of China bPhysics Department, Laboratory of Advanced Materials, Tsinghua University, Beijing 100084, People’s Republic of China Received 5 March 2007; accepted 17 June 2007. by D.D. Sarma. Available online 21 June 2007.
Abstract
The hysteretic and reversible polarity-dependent resistive switching effect has been studied in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC bias stress and voltage pulses. A distinct current–voltage characteristic of the Ag/LSMO system with pronounced nonlinearity, asymmetry and hysteresis was observed, which is considered to be a precursor sign of the resistance switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were provided. Reproducible switching properties, involving non-symmetrical R–V hysteresis loop, active pulse width window and stepwise multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile memory applications.
Keywords: A. La0.67Sr0.33MnO3; A. Thin film; D. Resistive switching; E. Electric-pulse-induced
