Characteristics of CdS Thin Films Deposited on Glass and Cu(In,Ga)Se2 Layer Using Chemical Bath Deposition
- Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Korea
- Received 6 August 2012
- Revised 29 August 2013
- Accepted 30 August 2013
- Available online 7 September 2013
Highlights
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CdS thin films deposited on Cu(In,Ga)Se2 layer using chemical bath deposition
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Elucidation of growth mechanism of CdS films under various deposition conditions.
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Interface analysis between CdS films and Cu(In,Ga)Se2 layer
Abstract
The characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 (CIGS) thin films using a chemical bath deposition method were investigated. The concentration ratio of [S] to [Cd] in the solution and the deposition temperature were varied as key parameters. As the [S]/[Cd] ratio increased, the deposition rates decreased and grains of CdS formed as clusters. When the deposition temperature increased, the deposition rate increased and the grain size decreased, resulting in a circular grain shape. The [S]/[Cd] ratio and deposition temperature were found to have a great effect on the film stoichiometry, surface morphology and transmittance of CdS films. XPS analysis revealed that CdS films contained a significant amount of O and the interdiffusion between the CdS and CIGS films took place. As the [S]/[Cd] ratio and deposition temperature increased, the CdS films showed good stoichiometry, smooth surface morphology and high transmittance.
