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 05.02.2009   Карта сайта     Language По-русски По-английски
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05.02.2009

Nature 457, 679-686 (5 February 2009) | doi:10.1038/nature07727; Received 31 July 2008; Accepted 12 December 2008; Published online 21 January 2009



A high-mobility electron-transporting polymer for printed transistors


He Yan1, Zhihua Chen1, Yan Zheng1, Christopher Newman1, Jordan R. Quinn1, Florian Dötz2, Marcel Kastler3 & Antonio Facchetti1




  1. Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
  2. BASF Global Research Center Singapore, Science Park Road 61, Singapore 112575
  3. BASF SE, GKS/E-B001, 67056 Ludwigshafen, Germany


Correspondence to: Antonio Facchetti1 Correspondence and requests for materials should be addressed to A.F. (Email: afacchetti@polyera.com).




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Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble (approx60 g l-1) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to approx0.45–0.85 cm2 V-1 s-1) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25–65) have been demonstrated.



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  • Chen Wev .  honorary member of ISSC science council

  • Harton Vladislav Vadim  honorary member of ISSC science council

  • Lichtenstain Alexandr Iosif  honorary member of ISSC science council

  • Novikov Dimirtii Leonid  honorary member of ISSC science council

  • Yakushev Mikhail Vasilii  honorary member of ISSC science council

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