Abstract

The paper is devoted to the Polish Government Program “New Technologies Based on Silicon Carbide for High Temperature, High Power and High Frequency Applications”. The program consists of three general tasks, aimed at: SiC bulk and substrate material fabrication, SiC device manufacturing and SiC device applications, respectively. In the contribution the main assumptions and goals of the program are given, and the executed and evaluated part of the research is presented in the field of the design and manufacturing of SiC power semiconductor devices.

Keywords: Silicon carbide; Schottky diode; PiN diode; MOSFET; JFET

Article Outline

1. Introduction

2. Scope of the program

3. Investigations aimed at device development

3.1. Selective doping of silicon carbide

3.2. Thermal diffusion of dopants in SiC

3.3. Gate dielectrics for silicon carbide MIS structures

3.4. Reactive ion etching (RIE) of silicon carbide surface

3.5. Schottky diodes

3.6. Field-effect transistors (FETs)

4. Investigations aimed at application of SiC devices

5. Summary

Acknowledgements

References