High-speed graphene transistors with a self-aligned nanowire gatep305
There is much interest in graphene for applications in ultrahigh-speed radio-frequency electronics, but conventional device fabrication processes lead to significant defects in graphene. Here a new way of fabricating high-speed graphene transistors is described. A nanowire with a metallic core and insulating shell is placed as the gate electrode on top of graphene, and source and drain electrodes are deposited through a self-alignment process, causing no appreciable damage to the graphene lattice.
Lei Liao, Yung-Chen Lin, Mingqiang Bao, Rui Cheng, Jingwei Bai, Yuan Liu, Yongquan Qu, Kang L. Wang, Yu Huang & Xiangfeng Duan