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 11.02.2011   Карта сайта     Language По-русски По-английски
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Экология
Электротехника и обработка материалов
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11.02.2011


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Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics


R.K. Guptaa, Corresponding Author Contact Information, E-mail The Corresponding Author, K. Ghosha, R. Patelb and P.K. Kahola



a Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO 65897, USA


b Roy Blunt Jordan Valley Innovation Center, Missouri State University, Springfield, MO 65806, USA




Received 6 July 2010; 


accepted 4 January 2011. 


Available online 6 January 2011.









Abstract



Gadolinium (Gd) doped cadmium oxide (CdO) thin films are grown at low temperature (100 °C) using pulsed laser deposition technique. The effect of oxygen partial pressures on structural, optical, and electrical properties is studied. X-ray diffraction studies reveal that these films are polycrystalline in nature with preferred orientation along (1 1 1) direction. Atomic force microscopy studies show that these films are very smooth with maximum root mean square roughness of 0.77 nm. These films are highly transparent and transparency of the films increases with increase in oxygen partial pressure. We observe an increase in optical bandgap of CdO films by Gd doping. The maximum optical band gap of 3.4 eV is observed for films grown at 1 × 10−5 mbar. The electrical resistivity of the films first decreases and then increases with increase in oxygen partial pressure. The lowest electrical resistivity of 2.71 × 10−5 Ω cm and highest mobility of 258 cm2/Vs is observed. These low temperature processed highly conducting, transparent, and wide bandgap semiconducting films could be used for flexible optoelectronic applications.









Research highlights



right triangle, filled The present manuscript entitled ‘Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics’ is believed to be the first study on the structural, optical, and electrical properties of gadolinium doped CdO thin films. right triangle, filled The effect of oxygen partial pressure on structural, optical, and electrical properties are studied. right triangle, filled These (1 1 1) preferred oriented films are highly transparent. right triangle, filled The optical bandgap of the films depends on oxygen partial pressure and varies from 3.0 eV to 3.4 eV. right triangle, filled The lowest electrical resistivity and highest mobility of 2.71 × 10−5 Ω cm and 258 cm2/Vs, respectively, is observed. right triangle, filled These low temperature processed high mobility and wide bandgap semiconducting films could be used for flexible optoelectronic and photovoltaic applications.





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