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 06.04.2006   Карта сайта     Language По-русски По-английски
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06.04.2006

Nature 440, 783-786 (6 April 2006) | doi:10.1038/nature04613; Received 20 September 2005; ; Accepted 23 January 2006


Solution-processed silicon films and transistors


Tatsuya Shimoda1,4, Yasuo Matsuki2,4, Masahiro Furusawa1,4, Takashi Aoki1, Ichio Yudasaka1, Hideki Tanaka1, Haruo Iwasawa2, Daohai Wang2, Masami Miyasaka1 and Yasumasa Takeuchi2,3



The use of solution processes—as opposed to conventional vacuum processes and vapour-phase deposition—for the fabrication of electronic devices has received considerable attention for a wide range of applications1, 2, 3, 4, 5, 6, 7, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors8, 9, 10, 11, some of which have mobilities comparable to that of amorphous silicon11 (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported12, 13. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V-1 s-1 and 6.5 cm2 V-1 s-1, respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs ( 1 cm2 V-1 s-1).



 



  1. Technology Platform Research Centre, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399-0293 Japan
  2. Fine Electronic Research Laboratories, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 Japan
  3. †Present address: International Centre for Material Research, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki-city, Kanagawa, 210-0855 Japan
  4. *These authors contributed equally to this work


Correspondence to: Masahiro Furusawa1,4 Correspondence and requests for materials should be addressed to M.F. (Email: furusawa.masahiro@exc.epson.co.jp).



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  • Chen Wev .  honorary member of ISSC science council

  • Harton Vladislav Vadim  honorary member of ISSC science council

  • Lichtenstain Alexandr Iosif  honorary member of ISSC science council

  • Novikov Dimirtii Leonid  honorary member of ISSC science council

  • Yakushev Mikhail Vasilii  honorary member of ISSC science council

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