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 17.05.2011   Карта сайта     Language По-русски По-английски
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17.05.2011

Solid State Ionics
Volume 190, Issue 1, 19 May 2011, Pages 53-59





Importance of pore structure control in porous substrate for high oxygen penetration in La0.6Sr0.4Ti0.3Fe0.7O3 thin film for CH4 partial oxidation


Akihiro Kawaharaa, b, low asterisk, E-mail The Corresponding Author, Yousuke Takahashib, Yuji Hiranob, Masayoshi Hiranoc and Tatsumi Ishiharaa





a Department of Applied Chemistry, Faculty of Engineering, Kyushyu University, Motooka 744, Nishi-ku, Fukuoka, 819-0395, Japan


b R&D Center, Noritake Company LTD., Miyoshi, Aichi, Japan


c Chubu Electric Power, Nagoya, Aichi, Japan




Received 19 May 2010;


revised 2 November 2010;


accepted 24 December 2010.


Available online 15 April 2011.











Abstract



Effects of the pore structure of the support on the oxygen permeation rates of La0.6Sr0.4Ti0.3Fe0.7O3 (LSTF) and La0.7Sr0.3Ga0.6Fe0.4O3 (LSGF) films were investigated in this study. The pore structure of the support was an important factor for achieving a high oxygen permeation rate. Although LSGF membranes with the same thicknesses and compositions were used, the oxygen permeation rates increased with decreasing thickness of the substrate, suggesting a slow gas diffusion in substrate and so oxygen partial pressure on MIEC membrane may decrease comparing with that in gas phase. Oxygen permeation rates in LSGF membranes were also successfully simulated based on Fick's diffusion theory, and the model suggested that the gas diffusion in the porous substrate was highly important for achieving a high permeation rate in an asymmetric MIEC membrane. A laser manufacturing technique successfully prepared an LSTF substrate with straight pores, and the dense LSTF film with a 70 μm thickness was deposited on the prepared substrate. When the LSTF substrate with the straight pore structure was used for the LSTF film, the oxygen permeation rate was considerably improved and achieved a value as high as 15 cm3/min cm2 (three times higher than that for CH4 fed to the substrate with random pores) under a CH4 partial oxidation condition.





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