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 06.09.2012   Карта сайта     Language По-русски По-английски
Новые материалы
Экология
Электротехника и обработка материалов
Медицина
Статистика публикаци


06.09.2012

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films





Journal name:

Nature

Volume:

489,

Pages:

128–132

Date published:

(06 September 2012)

DOI:

doi:10.1038/nature11434


Received


Accepted


Published online







Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors1, 2, 3, 4, 5, 6, 7. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates8, 9, 10, 11, 12, 13. But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature2, 14, 15, 16, 17, 18, 19, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7cm2V−1s−1 (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340kHz, corresponding to a propagation delay of less than 210nanoseconds per stage.


 


ftp://ihim.uran.ru/localfiles/nature11434.pdf





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  • Chen Wev .  honorary member of ISSC science council

  • Harton Vladislav Vadim  honorary member of ISSC science council

  • Lichtenstain Alexandr Iosif  honorary member of ISSC science council

  • Novikov Dimirtii Leonid  honorary member of ISSC science council

  • Yakushev Mikhail Vasilii  honorary member of ISSC science council

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