Characteristics of CdS Thin Films Deposited on Glass and Cu(In,Ga)Se2 Layer Using Chemical Bath Deposition
- Department of Chemical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Korea
- Received 6 August 2012
- Revised 29 August 2013
- Accepted 30 August 2013
- Available online 7 September 2013
CdS thin films deposited on Cu(In,Ga)Se2 layer using chemical bath deposition
Elucidation of growth mechanism of CdS films under various deposition conditions.
Interface analysis between CdS films and Cu(In,Ga)Se2 layer
The characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 (CIGS) thin films using a chemical bath deposition method were investigated. The concentration ratio of [S] to [Cd] in the solution and the deposition temperature were varied as key parameters. As the [S]/[Cd] ratio increased, the deposition rates decreased and grains of CdS formed as clusters. When the deposition temperature increased, the deposition rate increased and the grain size decreased, resulting in a circular grain shape. The [S]/[Cd] ratio and deposition temperature were found to have a great effect on the film stoichiometry, surface morphology and transmittance of CdS films. XPS analysis revealed that CdS films contained a significant amount of O and the interdiffusion between the CdS and CIGS films took place. As the [S]/[Cd] ratio and deposition temperature increased, the CdS films showed good stoichiometry, smooth surface morphology and high transmittance.